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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=90 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 3 5 25 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=2.5 A;IB=0.8A IC=2.5 A;IB=0.8A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 tf ts DC current gain DC current gain Fall time IC=2.5A;IBend=0.8A;LB=5H Storage time 13 IC=0.5A ; VCE=5V IC=2.5A ; VCE=10V 8 4 MIN 600 5 TYP. 2SD850 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat MAX UNIT V V 4.0 1.5 50 1.0 V V A mA 15 1.0 s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD850 Fig.2 Outline dimensions 3 |
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